| PART |
Description |
Maker |
| FLM1414-4F |
INTERNALLY MATCHED POWER GAAS FET
|
Eudyna Devices Inc
|
| MGFK37V4045 MGFK37V404511 |
X/Ku band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| FLM1414-4F |
Internally Matched Power GaAs FET 内部匹配砷化镓场效应
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| MGFK25V4045 MGFK25V404511 |
X/Ku band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V5964A MGFC39V5964A11 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC38V5964 MGFC38V596411 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V3436 MGFC39V343611 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V3742A11 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC40V5258 MGFC40V525811 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC40V3742 MGFC40V374211 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC36V5258 C365258 |
5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
